Molecular Beam Epitaxy

Molecular Beam Epitaxy (MBE) is a deposition technique commonly used for compound semiconductor growth. It has widespread use in R&D labs, but also in commercial applications such as GaAs and InP-based Heterojunction Bipolar Transistors (HBTs). In my lab, I am working on refurbishing a Varian MOD Gen II MBE chamber. We received the system from a fellow university lab, but it has needed a bit of work in getting it up and running. I have also spent a good amount of time getting it cleaned out after 30+ years of continuous usage. When I finally get it running, I hope to have some material posted here about the process (with lots of photos!). Our initial plans in using it are for growing structures with LTG-GaAs (low-temperature grown GaAs). In the future, it will be converted for investigations in III-V / II-VI heterovalent alloys.