Proposal of ZnSe/GaAs Digital Alloys for High Band Gap Solar Cells and True Green LEDs

Authors

Kyle H. Montgomery, Samarth Agarwal, Gerhard Klimeck, Jerry M. Woodall

Publication

IEEE Nanotechnology Materials and Devices Conference (NMDC), Traverse City, MI, 2009, pp. 217-220.

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Abstract

Solar cells tuned for high energy photon absorption and light emitting diodes tuned for true green wavelength emission are proposed using the ZnSe/GaAs (001) superlattice. The effective band gap of this superlattice as a function of monolayers of ZnSe and GaAs within the range of 1.5 to 2.3 eV is shown. A discussion is given on the application of this particular superlattice in multijunction solar cells and solid-state lighting.

Keywords

solar, light emitting diodes, superlattice, digital alloy, ZnSe-GaAs.

DOI

10.1109/NMDC.2009.5167542

Citation

K. H. Montgomery, S. Agarwal, G. Klimeck, and J. M. Woodall, “Proposal of ZnSe/GaAs digital alloys for high band gap solar cells and true green LEDs,” presented at the IEEE Nanotechnology Materials and Devices Conference (NMDC), Traverse City, MI, 2009, pp. 217-220.