Proposal of ZnSe/GaAs Digital Alloys for High Band Gap Solar Cells and True Green LEDs
Kyle H. Montgomery, Samarth Agarwal, Gerhard Klimeck, Jerry M. Woodall
IEEE Nanotechnology Materials and Devices Conference (NMDC), Traverse City, MI, 2009, pp. 217-220.
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Solar cells tuned for high energy photon absorption and light emitting diodes tuned for true green wavelength emission are proposed using the ZnSe/GaAs (001) superlattice. The effective band gap of this superlattice as a function of monolayers of ZnSe and GaAs within the range of 1.5 to 2.3 eV is shown. A discussion is given on the application of this particular superlattice in multijunction solar cells and solid-state lighting.
solar, light emitting diodes, superlattice, digital alloy, ZnSe-GaAs.
K. H. Montgomery, S. Agarwal, G. Klimeck, and J. M. Woodall, “Proposal of ZnSe/GaAs digital alloys for high band gap solar cells and true green LEDs,” presented at the IEEE Nanotechnology Materials and Devices Conference (NMDC), Traverse City, MI, 2009, pp. 217-220.