Heterogeneous Integration of III-V on Si: Overcoming the Lattice-Mismatch Barrier via the 1D Route


Jae Cheol Shin, Parsian Mohseni, Stephanie Tomasulo, Kyle Montgomery, Minjoo Lee, and Xiuling Li


CLEO: Science and Innovations, San Jose, CA, 2012.


Manuscript (pdf)
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We demonstrate one-dimensional heteroepitaxy of InGaAs nanowires in the entire composition range on silicon substrates without dislocations. Doping and interfaces are characterized. Applications including improving the silicon solar cell efficiency will be presented.


InGaAs, heterogeneous, nanowires, MOCVD, solar, silicon.




J. C. Shin, P. Mohseni, S. Tomasulo, K. H. Montgomery, M. Lee, and X. Li, “Heterogeneous Integration of III-V on Si: overcoming the lattice-mismatch barrier via the 1D route,” in CLEO: Science and Innovations, San Jose, CA, 2012, p. CF3J.7.