Heterogeneous Integration of III-V on Si: Overcoming the Lattice-Mismatch Barrier via the 1D Route

Authors

Jae Cheol Shin, Parsian Mohseni, Stephanie Tomasulo, Kyle Montgomery, Minjoo Lee, and Xiuling Li

Publication

CLEO: Science and Innovations, San Jose, CA, 2012.

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Abstract

We demonstrate one-dimensional heteroepitaxy of InGaAs nanowires in the entire composition range on silicon substrates without dislocations. Doping and interfaces are characterized. Applications including improving the silicon solar cell efficiency will be presented.

Keywords

InGaAs, heterogeneous, nanowires, MOCVD, solar, silicon.

DOI

10.1364/CLEO_SI.2012.CF3J.7

Citation

J. C. Shin, P. Mohseni, S. Tomasulo, K. H. Montgomery, M. Lee, and X. Li, “Heterogeneous Integration of III-V on Si: overcoming the lattice-mismatch barrier via the 1D route,” in CLEO: Science and Innovations, San Jose, CA, 2012, p. CF3J.7.