Luminescence in LPE AlGaAs near the Direct-Indirect Transition Point


Kyle H. Montgomery, Xin Zhao, and Jerry M. Woodall


54th Electronic Materials Conference, State College, PA, 2012.


Extended Abstract (pdf)
Slides (pdf)
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While GaInP is currently the material of choice for long wavelength visible emitters (down to yellow-green region), there are limitations due to strain-induced ordering in the lattice. Also, adding Al could push emission into the green region, but diffusion lengths tend to suffer as a result and quantum efficiency drops precipitously. To counter the limitation at short wavelengths, (In)GaN has been refined for use despite the large lattice mismatch to available substrates. However, neither system (GaInP or InGaN) has yet been able to fully bridge the “green gap” from yellow-green to blue-green. This work seeks to explore an entirely new alternative, namely by exploiting emission at the Γ-point in indirect-band gap AlGaAs grown by LPE. In so doing, one could open up a range of emitters from 1.4 to around 2.9eV in a single material system. Puron et. al. previously reported on this point, but focus was given to low-temperature characterization.


AlGaAs, liquid phase epitaxy, direct semiconductors, luminescence



K. H. Montgomery, X. Zhao, and J. M. Woodall, “Luminescence in LPE AlGaAs near the Direct-Indirect Transition Point,” presented at the 54th Electronic Materials Conference, State College, PA, 2012.