Layered Growth of Lattice-Mismatched GaInP on GaP Substrates by Liquid Phase Epitaxy
Xin Zhao, Kyle H. Montgomery and Jerry M. Woodall
55th Electronic Materials Conference, South Bend, IN, 2013.
Extended Abstract (pdf)
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GaInP is a III-VI ternary semiconductor alloy of vital importance in visible wavelength optoelectronic devices. Although there is significant literature on the growth of Ga0.51In0.49P lattice-matched to GaAs, few reports discuss the growth on lattice-mismatched GaP substrates, especially by liquid phase epitaxy (LPE). LPE of GaxIn1-xP on GaP can provide an alternate route to fabricating high efficiency yellow-green LEDs due to the superior crystal quality LPE can achieve by equilibrium growth. Further, due to LPE’s tolerance for producing high quality Al-rich alloys, this work provides a path towards Al-rich (Al,Ga,In)P alloys that emit in the green part of the spectrum, therein addressing the notorious “green gap.” Previous practice of LPE of GaxIn1-xP on GaP has generally led to columnar growth at large misfit, instead of preferred layer-by-layer growth. This work investigates the effect of different growth schedules on surface morphology of the epilayer and presents a way to realize layered growth.
gallium phosphide, epitaxy, liquid phase epitaxy, GaInP, GaP, Si.
X. Zhao, K. H. Montgomery, and J. M. Woodall, “Layered Growth of Lattice-Mismatched GaInP on GaP Substrates by Liquid Phase Epitaxy,” presented at the 55th Electronic Materials Conference, South Bend, IN, 2013.