Growth of AlGaAs Solar Cells by Liquid-Phase Epitaxy for Tandem Solar Cell Applications
Xin Zhao, Kyle H. Montgomery, and Jerry M. Woodall
57th Electronic Materials Conference, Columbus, OH, 2015.
Extended Abstract (pdf)
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There is increasing interest in using wide bandgap materials in top sub-cells for dual-junction solar cells based on c-Si bottom sub-cells. In theory, when combined with a c-Si sub-cell, a top sub-cell bandgap of ~1.72 eV enables an optimal overall power conversion efficiency of more than 37% under the AM1.5G reference spectrum. AlGaAs, with a tunable direct bandgap from 1.42 eV to 2 eV, is a candidate material for the top sub-cell. Moreover, AlGaAs can be grown lattice-matched on GaAs substrates and then bonded to a c-Si bottom sub-cell with the native GaAs substrate subsequently removed . Alternatively, AlGaAs can be deposited directly on a GaP/c-Si superstrate . Because liquid-phase epitaxy (LPE) is known to be suitable for growing high quality AlGaAs, we have adopted its use in this work for our Al0.2Ga0.8As solar cell growth.
AlGaAs, tandem solar cell, dual junction, liquid phase epitaxy, Hall effect.
X. Zhao, K. H. Montgomery, and J. M. Woodall, “Growth of AlGaAs Solar Cells by Liquid-Phase Epitaxy for Tandem Solar Cell Applications,” at the 57th Electronic Materials Conference, Columbus, OH, 2015.