Modeling Wide Bandgap GaInP Photovoltaic Cells For Conversion Efficiencies Up to 16.5%
Yubo Sun, Kyle H. Montgomery, Xufeng Wang, Stephanie Tomasulo, Minjoo Larry Lee, and Peter Bermel
42nd IEEE Photovoltaic Specialists Conference, New Orleans, LA, 2015.
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Here we consider how to design wide bandgap (Eg> 2.1 eV at 27 °C) GaInP photovoltaic cells. Detailed absorption data for the Ga-rich alloy is obtained by extrapolating literature values for InP and Ga0.5In0.5P, then combined with estimates of carrier lifetime (0.06 ns) and interface recombination (9×105 cm/s), to accurately reproduce the EQE, Jsc, and Voc observed in published experimental devices. Small discrepancies are caused by slight differences in optical constants and interface recombination. This modeling process illustrates the major sources of loss, which will help define a path forward towards improving the performance of these wide bandgap cells much closer to the theoretical limit – approximately 16.5% at 50 °C.
GaInP, tandem solar cell, multijunction, wide bandgap.
Y. Sun, K. H. Montgomery, X. Wang, S. Tomasulo, M. L. Lee, and P. Bermel, “Modeling Wide Bandgap GaInP Photovoltaic Cells For Conversion Efficiencies Up to 16.5%,” at the 42nd IEEE Photovoltaic Specialists Conference, New Orleans, LA, 2015.