Design Guidelines for True Green LEDs and High Efficiency Photovoltaics Using ZnSe/GaAs Digital Alloys

Authors

Samarth Agarwal*, Kyle H. Montgomery*, Timothy B. Boykin, Gerhard Klimeck, and Jerry M. Woodall
*contributed equally to this work

Publication

Electrochemical and Solid-State Letters, vol. 13, pp. H5-H7, 2010.

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Abstract

In the fields of solid-state lighting and high efficiency solar photovoltaics PVs, a need still exists for a material system that can target the 2.3–2.5 eV energy range. The ZnSe/GaAs system is shown to have great potential. The digital alloy approach can be utilized as a well-ordered design alternative to the disordered alloyed systems. The effective bandgap of the ZnSe/GaAs001 superlattice has been studied as a function of the constituent monolayers using tight binding. The possibility of engineering a range of bandgaps with the same material system, to achieve the optimum value for solar PV and light emitting diode LED applications, has been proposed.

Keywords

superlattice, ZnSe-GaAs, solar cells, light emitting diodes, heterovalent alloy

DOI

10.1149/1.3250436

Citation

S. Agarwal, K. H. Montgomery, T. B. Boykin, G. Klimeck, and J. M. Woodall, “Design Guidelines for True Green LEDs and High Efficiency Photovoltaics Using ZnSe/GaAs Digital Alloys,” Electrochemical and Solid-State Letters, vol. 13, pp. H5-H7, 2010.