Design Guidelines for True Green LEDs and High Efficiency Photovoltaics Using ZnSe/GaAs Digital Alloys
Samarth Agarwal*, Kyle H. Montgomery*, Timothy B. Boykin, Gerhard Klimeck, and Jerry M. Woodall
*contributed equally to this work
Electrochemical and Solid-State Letters, vol. 13, pp. H5-H7, 2010.
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In the fields of solid-state lighting and high efficiency solar photovoltaics PVs, a need still exists for a material system that can target the 2.3–2.5 eV energy range. The ZnSe/GaAs system is shown to have great potential. The digital alloy approach can be utilized as a well-ordered design alternative to the disordered alloyed systems. The effective bandgap of the ZnSe/GaAs001 superlattice has been studied as a function of the constituent monolayers using tight binding. The possibility of engineering a range of bandgaps with the same material system, to achieve the optimum value for solar PV and light emitting diode LED applications, has been proposed.
superlattice, ZnSe-GaAs, solar cells, light emitting diodes, heterovalent alloy
S. Agarwal, K. H. Montgomery, T. B. Boykin, G. Klimeck, and J. M. Woodall, “Design Guidelines for True Green LEDs and High Efficiency Photovoltaics Using ZnSe/GaAs Digital Alloys,” Electrochemical and Solid-State Letters, vol. 13, pp. H5-H7, 2010.