Heterogeneous Integration of InGaAs Nanowires on the Back Surface of Si Solar Cells for Efficiency Enhancement

Authors

Jae Cheol Shin, Parsian K. Mohseni, Ki Jun Yu, Stephanie Tomasulo, Kyle H. Montgomery, Minjoo L. Lee, John A. Rogers, and Xiuling Li

Publication

ACS Nano, vol. 6, pp. 11074-11079, 2012.

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Abstract

We demonstrate energy-conversion-efficiency (η) enhancement of silicon (Si) solar cells by the heterogeneous integration of an InxGa1xAs nanowire (NW) array on the rear surface. The NWs are grown via a catalyst-free, self assembled method on Si(111) substrates using metalorganic chemical vapor deposition (MOCVD). Heavily p-doped InxGa1xAs (x ≈ 0.7) NW arrays are utilized as not only back-reflectors but also low bandgap rear-point-contacts of the Si solar cells. External quantum efficiency of the hybrid InxGa1xAs NW-Si solar cell is increased over the entire solar response wavelength range; and η is enhanced by 36% in comparison to Si solar cells processed under the same condition without the NWs.

Keywords

MOCVD, nanowires, silicon, InxGa1xAs, solar cells

DOI

10.1021/nn304784y

Citation

J. C. Shin, P. K. Mohseni, K. J. Yu, S. Tomasulo, K. H. Montgomery, M. Lee, J. A. Rogers, and X. Li, “Heterogeneous Integration of InGaAs Nanowires on the Back Surface of Si Solar Cells for Efficiency Enhancement,” ACS Nano, vol. 6, pp. 11074-11079, 2012.