Layered Growth of Lattice-Mismatched GaInP on GaP Substrates by Liquid Phase Epitaxy
Xin Zhao, Kyle H. Montgomery, and Jerry M. Woodall
Journal of Electronic Materials, vol. 43, no. 4, pp. 894-901, 2014.
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We report layered growth of GaxIn1xP on GaP substrates using single-step liquid phase epitaxy (LPE) with a Sn-based melt when the lattice mismatch is greater than 0.4 % (x< 0.95). Compositional control was observed by (1) varying the cooling rate and (2) changing the melt-back temperature at the beginning of the growth. Possible growth mechanisms are proposed to explain the principles of both approaches of compositional control. Smooth epilayers have been observed. High resolution x-ray diffraction was used to characterize the composition of the epilayers, and room temperature photoluminescence was reported for one of the samples with the composition of x = 0.11. Planview TEM measurements revealed threading dislocation densities on the order of 108 cm2 in the upper regions of the GaxIn1xP epilayers. In contrast, when using In-based melts, LPE of GaxIn1xP on GaP (100) substrates exhibited island growth at large misfits, whereas edge growth dominated when using GaP (111B) substrates under equivalent growth conditions.
GaInP, GaP, liquid phase epitaxy, photoluminescence, high resolution x-ray diffraction, layered growth
X. Zhao, K. H. Montgomery, and J. M. Woodall, “Layered Growth of Lattice-Mismatched GaInP on GaP Substrates by Liquid Phase Epitaxy,” J. Electron. Mater., vol. 43, no. 4, pp. 894-901, 2014.