Pulse laser deposition fabricated InP/Al-ZnO heterojunction solar cells with efficiency enhanced by an i-ZnO interlayer

Authors

Qiong Nian, Kyle H. Montgomery, Xin Zhao, Thomas N. Jackson, Jerry M. Woodall, and Gary J. Cheng

Publication

Applied Physics A, Sept. 2015.

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Abstract

Indium phosphide (InP) has long since been seen as the ideal material choice for single-junction solar cells given its optimal band gap and high absorption coefficient. We report on the performance of heterojunction solar cells formed by depositing aluminum-doped ZnO (AZO), using pulsed laser deposition for the first time, onto p-type InP substrates. It is also found that a ZnO insulator layer (i-ZnO) between an InP base and AZO emitter can yield higher solar conversion efficiency and quantum efficiency over a baseline AZO/InP device. This 10-nm-thick intrinsic ultra-thin buffer enhanced collection probability but decreased surface recombination rate, which in turn shoot short-circuit current, open-circuit voltage, and fill factor to 17.4 mA/cm2, 0.58 V, and 72.9 %, respectively. A maximum power conversion efficiency of 7.3 % was realized by intergrading i-ZnO, which is ~20 % higher than baseline AZO/InP device of 6.1 %. This is also the record for this type of cell structure, using AZO as the emitter.

Keywords

Indium phosphide, Photovoltaic cells, Solar energy, Zinc Oxide, Pulsed Laser Deposition

DOI

10.1007/s00339-015-9493-5

Citation

Q. Nian, K. H. Montgomery, X. Zhao, T. Jackson, J. M. Woodall, and G. J. Cheng, “Pulse laser deposition fabricated InP/Al-ZnO heterojunction solar cells with efficiency enhanced by an i-ZnO interlayer,” Appl. Phys. A, pp. 1–8, Sep. 2015.