Superlattice Structure and Method for Manufacturing Same
Jerry M. Woodall, Kyle H. Montgomery, Samarth Agarwal, Gerhard Klimeck
U.S. Patent Application 61/172,465 (Provisional), April 24, 2009.
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A novel method for the fabrication of a digital alloy using a superlattice is disclosed. Using an epitaxy process, ZnSe and GaAs are grown in thin layers to form a superlattice with effective band gaps between 1.5 and 2.3 eV.
ZnSe-GaAs, solar cells, light emitting diodes, digital alloy, superlattice
J. M. Woodall, K. H. Montgomery, S. Agarwal, G. Klimeck, “Superlattice Structure and Method for Manufacturing Same,” U.S. Patent Application 61/172,465 (Provisional), April 24, 2009.