Superlattice Structure and Method for Manufacturing Same

Authors

Jerry M. Woodall, Kyle H. Montgomery, Samarth Agarwal, Gerhard Klimeck

Publication

U.S. Patent Application 61/172,465 (Provisional), April 24, 2009.

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Abstract

A novel method for the fabrication of a digital alloy using a superlattice is disclosed. Using an epitaxy process, ZnSe and GaAs are grown in thin layers to form a superlattice with effective band gaps between 1.5 and 2.3 eV.

Keywords

ZnSe-GaAs, solar cells, light emitting diodes, digital alloy, superlattice

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Citation

J. M. Woodall, K. H. Montgomery, S. Agarwal, G. Klimeck, “Superlattice Structure and Method for Manufacturing Same,” U.S. Patent Application 61/172,465 (Provisional), April 24, 2009.