Method of Fabricating a Semiconductor Junction
Jerry M. Woodall and Kyle H. Montgomery
U.S. Patent Application 12/827,390, Publication US 2011/0048537 A1, Publication Date: March 3, 2011.
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A method of fabricating a semiconductor junction is disclosed. The method includes forming a quaternary heterovalent compound semiconductor alloy epilayer, determining a doping characteristic of the epilayer, and forming a secondary layer on the epilayer to create a semiconductor junction, the secondary layer being doped in response to the determined doping characteristic of the epilayer. Solar cell and light emitting diode designs are also disclosed.
ZnSe-GaAs, solar cells, light emitting diodes, heterovalent alloy
J. M. Woodall and K. H. Montgomery, “Method of Fabricating a Semiconductor Junction,” U.S. Patent Application 12/827,390, Publication US 2011/0048537 A1, Publication Date: March 3, 2011.